This monograph reports a research carried out to design monolithic
microwave integrated circuit (MMIC) low pass filters using circuit
and electromagnetic simulations. The filters were designed to be
constructed on both Si and GaAs semiconductor wafers. The principal
objectives were to reduce both circuit size and spurious content.
Three types of designs are proposed here. The first is a
Butterworth filter made of commensurate stubs, while the second
filter is of the m-derived type. Both filters are realized using a
single gold layer on the semiconductor substrate. The third filter
uses a novel metal/polyimide/metal multilayer structure consisting
of buried coplanar waveguide and polyimide overlay. Owing to the
unique multilayer architecture, the filter operates well without
spurious in the passband and stopband. The combination of several
different materials in the structure also reduces the size. The
proposed filter has stopband insertion and return losses of 20 dB
and 25 dB respectively. A theoretical model to explain the new
structure and design methodology are discussed in detail.
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