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UDSM CMOS Circuits (Paperback)
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UDSM CMOS Circuits (Paperback)
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A simple and accurate delay model is proposed for Ultra Deep
Sub-micron CMOS circuits (CMOS Inverter, NAND2, NOR2 etc) based on
nth power law when the channel length is less than the 90nm. All
the parameters are taken from BSIM.4.6.1 manual. This work derives
analytical expression for the delay model of a CMOS inverter
including all sorts of secondary effects i.e. Body Bias effect,
Channel Length Modulation Effect (CLM), Velocity Saturation effect,
Drain Induced Barrier Lowering (DIBL), Gate Induced Drain Leakage
(GIDL), Substrate Current Induced Body Effect (SCBE), Drain-Induced
Threshold Shift (DITS), which may occur in the Ultra Deep Submicron
MOS devices. We also extend our delay model for 2 inputs CMOS NAND
& NOR gates. Our result is better than simulation result with
respect to both quality and estimation time. This work also
thoroughly described the delay dependence on different parameters
such as channel length, Load Capacitance, Supply voltage,
Transition time, Velocity Saturation Coefficient, Threshold
Voltage, Load Resistance, Width variation etc. This also explained
the different power models for the estimation of UDSM circuts.
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