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Heavily-Doped 2D-Quantized Structures and the Einstein Relation (Hardcover, 2015 ed.)
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Heavily-Doped 2D-Quantized Structures and the Einstein Relation (Hardcover, 2015 ed.)
Series: Springer Tracts in Modern Physics, 260
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This book presents the Einstein Relation(ER) in two-dimensional
(2-D) Heavily Doped (HD) Quantized Structures. The materials
considered are quantized structures of HD non-linear optical,
III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP,
Gallium Antimonide, II-V, Bismuth Telluride together with various
types of HD superlattices and their Quantized counterparts
respectively. The ER in HD opto-electronic materials and their
nanostructures is studied in the presence of strong light waves and
intense electric fields on the basis of newly formulated electron
dispersion laws that control the studies of such quantum effect
devices. The suggestion for the experimental determination of HD 2D
and 3D ERs and the importance of measurement of band gap in HD
optoelectronic materials under intense built-in electric field in
nanodevices and strong external photo excitation (for measuring
photon induced physical properties) are also discussed in this
context. The influence of crossed electric and quantizing magnetic
fields on the ER of the different 2D HD quantized structures
(quantum wells, inversion and accumulation layers, quantum well HD
superlattices and nipi structures) under different physical
conditions is discussed in detail. This monograph contains 100 open
research problems which form the integral part of the text and are
useful for both Ph.D aspirants and researchers in the fields of
condensed matter physics, solid-state sciences, materials science,
nano-science and technology and allied fields.
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