This thoroughly revised and updated Fourth Edition of a
time-honored text provides the reader with a comprehensive
introduction to the field of scanning electron microscopy (SEM),
energy dispersive X-ray spectrometry (EDS) for elemental
microanalysis, electron backscatter diffraction analysis (EBSD) for
micro-crystallography, and focused ion beams. Students and academic
researchers will find the text to be an authoritative and scholarly
resource, while SEM operators and a diversity of practitioners -
engineers, technicians, physical and biological scientists,
clinicians, and technical managers - will find that every chapter
has been overhauled to meet the more practical needs of the
technologist and working professional. In a break with the past,
this Fourth Edition de-emphasizes the design and physical operating
basis of the instrumentation, including the electron sources,
lenses, detectors, etc. In the modern SEM, many of the low level
instrument parameters are now controlled and optimized by the
microscope's software, and user access is restricted. Although the
software control system provides efficient and reproducible
microscopy and microanalysis, the user must understand the
parameter space wherein choices are made to achieve effective and
meaningful microscopy, microanalysis, and micro-crystallography.
Therefore, special emphasis is placed on beam energy, beam current,
electron detector characteristics and controls, and ancillary
techniques such as energy dispersive x-ray spectrometry (EDS) and
electron backscatter diffraction (EBSD). With 13 years between the
publication of the third and fourth editions, new coverage reflects
the many improvements in the instrument and analysis techniques.
The SEM has evolved into a powerful and versatile characterization
platform in which morphology, elemental composition, and crystal
structure can be evaluated simultaneously. Extension of the SEM
into a "dual beam" platform incorporating both electron and ion
columns allows precision modification of the specimen by focused
ion beam milling. New coverage in the Fourth Edition includes the
increasing use of field emission guns and SEM instruments with high
resolution capabilities, variable pressure SEM operation, theory,
and measurement of x-rays with high throughput silicon drift
detector (SDD-EDS) x-ray spectrometers. In addition to powerful
vendor- supplied software to support data collection and
processing, the microscopist can access advanced capabilities
available in free, open source software platforms, including the
National Institutes of Health (NIH) ImageJ-Fiji for image
processing and the National Institute of Standards and Technology
(NIST) DTSA II for quantitative EDS x-ray microanalysis and
spectral simulation, both of which are extensively used in this
work. However, the user has a responsibility to bring intellect,
curiosity, and a proper skepticism to information on a computer
screen and to the entire measurement process. This book helps you
to achieve this goal. Realigns the text with the needs of a diverse
audience from researchers and graduate students to SEM operators
and technical managers Emphasizes practical, hands-on operation of
the microscope, particularly user selection of the critical
operating parameters to achieve meaningful results Provides
step-by-step overviews of SEM, EDS, and EBSD and checklists of
critical issues for SEM imaging, EDS x-ray microanalysis, and EBSD
crystallographic measurements Makes extensive use of open source
software: NIH ImageJ-FIJI for image processing and NIST DTSA II for
quantitative EDS x-ray microanalysis and EDS spectral simulation.
Includes case studies to illustrate practical problem solving
Covers Helium ion scanning microscopy Organized into relatively
self-contained modules - no need to "read it all" to understand a
topic Includes an online supplement-an extensive "Database of
Electron-Solid Interactions"-which can be accessed on SpringerLink,
in Chapter 3
General
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