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Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II: Volume 1432 (Hardcover)
Loot Price: R1,818
Discovery Miles 18 180
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Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II: Volume 1432 (Hardcover)
Series: MRS Proceedings
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Symposium G, 'Reliability and Materials Issues of III-V and II-VI
Semiconductor Optical and Electron Devices and Materials II', was
held April 9-13 at the 2012 MRS Spring Meeting in San Francisco,
California. Achieving high reliability is a key issue for
semiconductor optical and electrical devices and is as important as
device performance for commercial application. Degradation of both
optical and electrical devices is strongly related to the materials
issues. A variety of material defects can occur during the device
fabrication processes, i.e., crystal growth, impurity diffusion,
ion-implantation, wet/dry etching, metallisation, bonding,
packaging, etc. This symposium presented state-of-the-art results
on reliability and degradation of various semiconductor optical and
electrical devices as well as their materials issues in thin-film
growth, wafer processing and device fabrication processes.
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