Mercury cadmium telluride (MCT) is the third most well-regarded
semiconductor after silicon and gallium arsenide and is the
material of choice for use in infrared sensing and imaging. The
reason for this is that MCT can be 'tuned' to the desired IR
wavelength by varying the cadmium concentration.
"Mercury Cadmium Telluride: Growth, Properties and Applications"
provides both an introduction for newcomers, and a comprehensive
review of this fascinating material. Part One discusses the history
and current status of both bulk and epitaxial growth techniques,
Part Two is concerned with the wide range of properties of MCT, and
Part Three covers the various device types that have been developed
using MCT. Each chapter opens with some historical background and
theory before presenting current research. Coverage includes: Bulk
growth and properties of MCT and CdZnTe for MCT epitaxial
growthLiquid phase epitaxy (LPE) growthMetal-organic vapour phase
epitaxy (MOVPE)Molecular beam epitaxy (MBE)Alternative
substratesMechanical, thermal and optical properties of MCTDefects,
diffusion, doping and annealingDry device processingPhotoconductive
and photovoltaic detectorsAvalanche photodiode
detectorsRoom-temperature IR detectors
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