Terrestrial neutron-induced soft errors in semiconductor memory
devices are currently a major concern in reliability issues.
Understanding the mechanism and quantifying soft-error rates are
primarily crucial for the design and quality assurance of
semiconductor memory devices.This book covers the relevant
up-to-date topics in terrestrial neutron-induced soft errors, and
aims to provide succinct knowledge on neutron-induced soft errors
to the readers by presenting several valuable and unique features.
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