The emergence of GaN-based devices promises a revolution in areas
requiring high performance electronics, such as high speed earth
and space-based communication systems, advanced radar, integrated
sensors, high temperature electronics, and utility power switching.
The properties of this system make it ideally suited for operation
at elevated temperatures and at voltage and current levels well
beyond that accessible by Si. Recent improvements in material
quality and device performance are rapidly opening the door to
commercialization, and III-N technologies are demonstrating
exciting developments of late. Though devices are entering
commercialization, there are still considerable unknowns,
particularly in the reliability field. Recent advances at the
University of Florida will be detailed in this work.
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