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Materials and Physics of Emerging Nonvolatile Memories, v. 1430 (Hardcover)
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Materials and Physics of Emerging Nonvolatile Memories, v. 1430 (Hardcover)
Series: MRS Proceedings
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Symposium E, 'Materials and Physics of Emerging Nonvolatile
Memories', was held 9-13 April at the 2012 MRS Spring Meeting in
San Francisco, California, which was a follow up of previous
symposia on nonvolatile memories. In this year's symposium, 127
papers were presented in 11 sessions, including 17 invited talks,
53 oral and 57 poster contributions. Such a large number of paper
submissions and high attendance in the symposium indicate
continuous strong interest and world wide research efforts in the
field of nonvolatile memories. Main research areas featured in
Symposium E were advanced flash and nanofloating gate memories,
ferroelectric and magnetoresistive memories, organic and molecular
memories, memristors and resistive switching memories, and
phase-change memories. In particular, a large number of
contributions were presented on resistive switching memories. The
selected papers in the proceedings volume have been categorised in
these areas.
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