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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Hardcover, 1st ed. 2016) Loot Price: R1,520
Discovery Miles 15 200
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Hardcover, 1st ed. 2016): Zhiqiang Li

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Hardcover, 1st ed. 2016)

Zhiqiang Li

Series: Springer Theses

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Loot Price R1,520 Discovery Miles 15 200 | Repayment Terms: R142 pm x 12*

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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8x10 7 *cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

General

Imprint: Springer-Verlag
Country of origin: Germany
Series: Springer Theses
Release date: June 2016
First published: 2016
Authors: Zhiqiang Li
Dimensions: 235 x 155 x 12mm (L x W x T)
Format: Hardcover
Pages: 59
Edition: 1st ed. 2016
ISBN-13: 978-3-662-49681-7
Categories: Books > Professional & Technical > Technology: general issues > Nanotechnology
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
Books > Science & Mathematics > Chemistry > Analytical chemistry > Qualitative analytical chemistry > Chemical spectroscopy, spectrochemistry > General
LSN: 3-662-49681-X
Barcode: 9783662496817

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