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A reprint of the classic text, this book popularized compact
modeling of electronic and semiconductor devices and components for
college and graduate-school classrooms, and manufacturing
engineering, over a decade ago. The first comprehensive book on MOS
transistor compact modeling, it was the most cited among similar
books in the area and remains the most frequently cited today. The
coverage is device-physics based and continues to be relevant to
the latest advances in MOS transistor modeling. This is also the
only book that discusses in detail how to measure device model
parameters required for circuit simulations.The book deals with the
MOS Field Effect Transistor (MOSFET) models that are derived from
basic semiconductor theory. Various models are developed, ranging
from simple to more sophisticated models that take into account new
physical effects observed in submicron transistors used in today's
(1993) MOS VLSI technology. The assumptions used to arrive at the
models are emphasized so that the accuracy of the models in
describing the device characteristics are clearly understood. Due
to the importance of designing reliable circuits, device
reliability models are also covered. Understanding these models is
essential when designing circuits for state-of-the-art MOS ICs.
A reprint of the classic text, this book popularized compact
modeling of electronic and semiconductor devices and components for
college and graduate-school classrooms, and manufacturing
engineering, over a decade ago. The first comprehensive book on MOS
transistor compact modeling, it was the most cited among similar
books in the area and remains the most frequently cited today. The
coverage is device-physics based and continues to be relevant to
the latest advances in MOS transistor modeling. This is also the
only book that discusses in detail how to measure device model
parameters required for circuit simulations.The book deals with the
MOS Field Effect Transistor (MOSFET) models that are derived from
basic semiconductor theory. Various models are developed, ranging
from simple to more sophisticated models that take into account new
physical effects observed in submicron transistors used in today's
(1993) MOS VLSI technology. The assumptions used to arrive at the
models are emphasized so that the accuracy of the models in
describing the device characteristics are clearly understood. Due
to the importance of designing reliable circuits, device
reliability models are also covered. Understanding these models is
essential when designing circuits for state-of-the-art MOS ICs.
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