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Showing 1 - 4 of 4 matches in All Departments
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
This book on the Laser Crystallization of Silicon reviews the
latest experimental and theoretical studies in the field. It has
been written by recognised global authorities and covers the most
recent phenomena related to the laser crystallization process and
the properties of the resulting polycrystalline silicon.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
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