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For the international second edition, the author builds upon and
expands on hallmark features of the book established in the first
edition, adding sections on new technology and increasing the
number of end-of-chapter problems by 30%. Updated material relating
to the environmental applications of technology was added , as well
as a new chapter on nanoscale devices. Chapters on MOS capacitor
and generation and recombination were also revised and updated. The
book is divided into 4 parts: Part I on Semiconductor Physics; Part
II on the principles of operation and modeling of the fundamental
junctions and transistors; Part III on the diode, MOSFET and BJT
topics needed for circuit design, and Part IV on photonic devices,
microwave FETs, negative-resistance diodes, and power devices.
Within each part, material is presented hierarchically, with core
topics first, followed by advanced topics.
The dimensions of modern semiconductor devices are reduced to the
point where classical semiconductor theory, including the concepts
of continuous particle concentration and continuous current,
becomes questionable. Further questions relate to two-dimensional
transport in the most important field-effect devices and
one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses,
Principles of Semiconductor Devices, Second Edition, presents the
semiconductor-physics and device principles in a way that upgrades
classical semiconductor theory and enables proper interpretations
of numerous quantum effects in modern devices. The semiconductor
theory is directly linked to practical applications, including the
links to the SPICE models and parameters that are commonly used
during circuit design.
The text is divided into three parts: Part I explains semiconductor
physics; Part II presents the principles of operation and modeling
of the fundamental junctions and transistors; and Part III provides
supplementary topics, including a dedicated chapter on the physics
of nanoscale devices, description of the SPICE models and
equivalent circuits that are needed for circuit design,
introductions to the most important specific devices (photonic
devices, JFETs and MESFETs, negative-resistance diodes, and power
devices), and an overview of integrated-circuit technologies. The
chapters and the sections in each chapter are organized so as to
enable instructors to select more rigorous and design-related
topics as they see fit.
The dimensions of modern semiconductor devices are reduced to the
point where classical semiconductor theory, including the concepts
of continuous particle concentration and continuous current,
becomes questionable. Further questions relate to two-dimensional
transport in the most important field-effect devices and
one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses,
Principles of Semiconductor Devices, Second Edition, presents the
semiconductor-physics and device principles in a way that upgrades
classical semiconductor theory and enables proper interpretations
of numerous quantum effects in modern devices. The semiconductor
theory is directly linked to practical applications, including the
links to the SPICE models and parameters that are commonly used
during circuit design. The text is divided into three parts: Part I
explains semiconductor physics; Part II presents the principles of
operation and modeling of the fundamental junctions and
transistors; and Part III provides supplementary topics, including
a dedicated chapter on the physics of nanoscale devices,
description of the SPICE models and equivalent circuits that are
needed for circuit design, introductions to the most important
specific devices (photonic devices, JFETs and MESFETs,
negative-resistance diodes, and power devices), and an overview of
integrated-circuit technologies. The chapters and the sections in
each chapter are organized so as to enable instructors to select
more rigorous and design-related topics as they see fit. New to
this Edition * A new chapter on the physics of nanoscale devices *
A revised chapter on the energy-band model and fully reworked and
updated material on crystals to include graphene and carbon
nanotubes * A revised P-N junction chapter to emphasize the current
mechanisms that are relevant to modern devices * JFETs and MESFETs
in a stand-alone chapter * Fifty-seven new problems and eleven new
examples
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