Boron Nitride nanotubes (BNNT) are of interest to the scientific
and technical communities for many of the same reasons that carbon
nanotubes (CNT) have attracted large amounts of attention. Both
materials have potentially unique and significant properties which
may have important structural and electronic applications in the
future. However of even more interest than their similarities may
be the differences between carbon and boron nanotubes. Whilt boron
nitride nanotubes possess a very high modulus similaar to CNT, they
are also more chemically and thermally inert. Additionally BNNT
possess more uniform electronic properties, having a uniform band
gap of approximately 5.5 eV while CNT vary from semi-conductin to
conductor behavior. Boron Nitride nanotubes have been synthesized
by a variety of methods such as chemical vapor deposition, arc
discharge and reactive milling. Consistently producing a reliable
product has proven difficult. Progress in synthesis of 1-2 gram
sized batches of Boron Nitride nanotubes will be discussed as well
as potential uses for this unique material.
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