Single Crystal Growth of Semiconductors from Metallic Solutions
covers the four principal growth techniques currently in use for
the growth of semiconductor single crystals from metallic
solutions. Providing an in-depth review of the state-of-the-art of
each, both experimentally and by numerical simulations. The
importance of a close interaction between the numerical and
experimental aspects of the processes is also emphasized.
Advances in the fields of electronics and opto-electronics are
hampered by the limited number of substrate materials which can be
readily produced by melt-growth techniques such as the Czochralski
and Bridgman methods. This can be alleviated by the use of
alternative growth techniques, and in particular, growth from
metallic solutions. The principal techniques currently in use are:
Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling
Heater Method, and; Liquid Phase Diffusion.
Single Crystal Growth of Semiconductors from Metallic Solutions
will serve as a valuable reference tool for researchers, and
graduate and senior undergraduate students in the field of crystal
growth. It covers most of the models developed in recent years. The
detailed development of basic and constitutive equations and the
associated interface and boundary conditions given for each
technique will be very valuable to researchers for the development
of their new models.
* Describes the fundamentals of crystal growth modelling
* Providing a state-of-the art description of the mathematical and
experimental growth processes
* Allows reader to gain clear insight into the practical and
mathematical aspects of the topic
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