This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts. The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.