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In the series of International Winter Schools on New Developments
in Solid State Physics, the fourth one was devoted to the subject:
"Two- Dimensional Systems: Physics and Devices". For the second
time the pro- ceedings of one of these Winter Schools appear as a
volume in the Springer Series in Solid-State Sciences (the earlier
proceedings were published as Vol. 53). The school was held in the
castle of MauterndorfjSalzburg (Austria) February 24-28, 1986.
These proceedings contain contributions ba:sed on the thirty
invited lectures. The school was attended by 179 registered
participants (40% students), who came from western European
countries, the United States of America, Japan, the People's
Republic of China and Poland. As far as the subjects are conterned,
several papers deal with the growth and characterization of
heterostructures. Dynamical RHEED tech- niques are described as a
tool for in situ studies of MBE growth mech- anisms. Various growth
techniques, including MBE, MOMBE, MOCVD and modifications of these,
are discussed. The limiting fa.ctors for the carrier mobilities and
the inftuence of the spacer thickness in single het- erostructures
of GaAs/GaAIAs seem to be understood and are no longer a matter of
controversy. In addition, the growth of two fascinating systems,
Si/SiGe and Hg _ Cd Te/CdTe, is discussed in detail.
The winter school on Localization and Confinement of Electrons in
Semicon ductors was the sixth of a series dealing with new
developments in solid state physics organized by the Austrian
Physical Society. The school, which was held in the castle of
Mautemdorf, in the federal province of Salzburg, Austria, February
19-23, 1990, was attended by about 200 participants. This is the
fourth such winter school to have the proceedings published in the
Springer Series in Solid-State Sciences, the earlier ones appearing
as Vols. 53, 67 and 83. The contributions of the invited speakers
are arranged in seven parts according to topic: quantum boxes and
quantum wires; localization and the metal-insulator transition; the
integer and fractional quantum Hall effects and electron-electron
interactions; tunneling and localization in low-dimensional
structures and superlattices; optical properties of confined
systems; impurities in quantum well structures; and optical and
magnetic properties of dilute mag netic semiconductor quantum well.
structures. A particular intention of this book is to present
relevant introductory articles alongside the most recent research
reports, all written by experts in the fields of localization and
condensation of electrons in semiconductors, the quantum Hall
effect, lateral superlattices, ballistic transport, etc. The
fascinating subject of quantum boxes (dots) and quantum wires is
treated in considerable detail. Experimental techniques for
producing later ally structured two-dimensional electron gas
systems are described together with methods for studying their
electrical and optical properties."
Owing to new physical, technological, and device concepts of
low-dimensionalelectronic systems, the physics and fabrication of
quasi-zero, one- and two-dimensional systems are rapidly growing
fields. The contributions presented in this volume cover results of
nanostructure fabrication including recently developed techniques,
for example, tunneling probe techniques and molecular beam epitaxy,
quantum transport including the integer and fractional quantum Hall
effect, optical and transport studies of the two-dimensional Wigner
solid, phonon studies of low-dimensional systems, and Si/SiGe
heterostructures and superlattices. To the readers new in the field
this volume gives a comprehensive introduction and for the experts
it is an update of their knowledge and a great help for decisions
about future research activities.
This volume presents a discussion of the latest results in the
physics of low-dimensional structures. At the winter school major
breakthroughs were reported, and some of the excitement of the
participants is reflected in the contributions. The topics treated
range from the fabrication of microstructures and the physical
background of future semiconductor devices to vertical transport in
nanostructures, universal conductance fluctuations, and the
transition from two-dimensional to one-dimensional conduction in
semiconductor structures.
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