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The International Symposium on the Science and Technology of
Mesoscopic Structures was held at Shin-Kohkaido in Nara from
November 6-8, 1991. The symposium was sponsored by the
International Institute for Advanced Study and partly by Nara
Prefecture, Nara City, Nara Convention Bureau, and the Ministry of
Education, Science and Culture of Japan, as well as industrial
organizations. We would like to acknowledge the support of the
symposium by these or ganizations. The scope of the symposium was
planned by the organizing committee to cover outstanding
contributors in the fields of (1) ballistic transport, (2) electron
wave guides and interference effects, (3) quantum confinement
effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6)
fabrication technology of meso scopic structures. Twenty-six
invited speakers were selected from the United States, Europe, and
Japan. In addition twenty-four contributed papers were accepted for
presentation at the poster session. These papers are included in
the proceedings. We are grateful to the organizing committee, Ms. Y
oshiko Kusaki of the Inter national Institute for Advanced Study
for the secretarial service, and Dr. Nobuya Mori, Osaka University,
for his scientific cooperation. Thanks are also due to the authors
and the participants for their contributions to a successful
symposium."
This book contains the invited review papers and contributed papers
presented at the University of Tokyo International Symposium on
Anderson localization. It provides an overview of rapidly
developing topics related to this area, including the
metal-insulator transition in doped semiconductors and disordered
metals, weak localization phenomena in two- and three-dimensional
dirty metals and semiconductor space-charge layers, the quantum
Hall effect, and localization in strong magnetic fields, together
with the newer subjects of quasicrystals and mesoscopic systems.
Quasicrystals are particularly interesting because their wave
functions exhibit self-similarity and are marginally localized or
delocalized, while in mesoscopic systems the conductance is no
longer a self-averaged quantity and fluctuations play an essential
role. This volume should be of use to anyone interested in the
development of Anderson localization.
This volume contains the proceedings of the Fourteenth Thniguchi
Symposium on the Theory of Condensed Matter, which was held from
November 10 to 14, 1991, at the Shima Kanko Hotel, Shima, Japan.
The topic of the symposium was Physics 0/ Mesoscopic Systems.
Mesoscopic systems have been developed band in band with the recent
progress in nanotechnology and are the melting pot of basic science
and technology. In nanostructures, the quantum effect of the
electron wave manifests itself because of the limited
dimensionality of the structure. The most typical features of these
structures are the discreteness of the energy spectrum and the
interference effect of electron waves, which have led to various
fascinating phenomena. The purpose of this symposium was to discuss
the latest developments in mesoscopic systems, especially transport
phenomena, from the viewpoint of basic physics. This volume starts
with an introduction to the field of mesoscopic systems together
with the paper by Prof. R. Kubo, who was the first to note the
existence of particular features of discrete energy levels in small
metallic particles. In Part II the electronic states of quantum
dots and the conductance through them are discussed. Tunneling via
small structures and junctions is studied in Part ill.
Semiconductor technology has developed considerably during the past
several decades. The exponential growth in microelectronic
processing power has been achieved by a constant scaling down of
integrated cir, cuits. Smaller fea ture sizes result in increased
functional density, faster speed, and lower costs. One key
ingredient of the LSI technology is the development of the lithog
raphy and microfabrication. The current minimum feature size is
already as small as 0.2 /tm, beyond the limit imposed by the
wavelength of visible light and rapidly approaching fundamental
limits. The next generation of devices is highly likely to show
unexpected properties due to quantum effects and fluctuations. The
device which plays an important role in LSIs is MOSFETs (metal
oxide-semiconductor field-effect transistors). In MOSFETs an
inversion layer is formed at the interface of silicon and its
insulating oxide. The inversion layer provides a unique
two-dimensional (2D) system in which the electron concentration is
controlled almost freely over a very wide range. Physics of such 2D
systems was born in the mid-1960s together with the development of
MOSFETs. The integer quantum Hall effect was first discovered in
this system."
Graphene has been attracting growing attentions in physics,
chemistry, and device applications after the discovery of
micromechanically cleaved graphene sheet by A. Geim and K.
Novoselov, who were awarded the 2010 Nobel Prize in Physics. The
electronic structure of graphene, which is described in terms of
massless Dirac fermions, brings about unconventional electronic
properties, which are not only an important basic issue in
condensed matter physics but also a promising target of
cutting-edge electronics/spintronics device applications.
Meanwhile, from chemistry aspect, graphene is the extreme of
condensed polycyclic hydrocarbon molecules extrapolated to infinite
size. Here, the concept on aromaticity, which organic chemists
utilize, is applicable. Interesting issues appearing between
physics and chemistry are pronounced in nanosized graphene
(nanographene), as we recognize the importance of the shape of
nanographene in understanding its electronic structure. This book
comprehensively discusses the fundamental issues related to the
electronic, magnetic, and chemical properties of condensed
polycyclic hyodrocarbon molecules, nanographene, and graphene.
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