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Taxonomy of Corynoneura Winnertz (Diptera: Chironomidae) (Paperback): Yue Fu, Xiangling Fang, Xin-Hua Wang Taxonomy of Corynoneura Winnertz (Diptera: Chironomidae) (Paperback)
Yue Fu, Xiangling Fang, Xin-Hua Wang
R2,459 Discovery Miles 24 590 Ships in 12 - 17 working days

Corynoneura is recognized as one of the most difficult group to classify, and there has been a long history of nomenclatural changes. Taxonomy of Corynoneura Winnertz (Diptera: Chironomidae) provides detailed and accurate taxonomy of the Corynoneura generic group and discusses the scientific basis for phylogenetic studies of Chironomidae. Taxonomy of Corynoneura Winnertz (Diptera: Chironomidae) is a useful resource for researchers and practitioners in the field of entomology, systematics, phylogeny, biogeography, biodiversity, and ecology. This book is composed of four main sections: introduction, keys, classification, and zoogeography. Coverage includes a preliminary biogeographic analysis of the worldwide fauna based on the Corynoneura generic group and species distribution data, summaries of the typical features used to classify an adult, and keys to all the Corynoneura generic group and male species of Corynoneura in the world. Over 100 species of Corynoneura are described in detail with morphological figures.

Integrated Power Devices and TCAD Simulation (Hardcover): Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin Integrated Power Devices and TCAD Simulation (Hardcover)
Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin
R6,156 Discovery Miles 61 560 Ships in 12 - 17 working days

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

Integrated Power Devices and TCAD Simulation (Paperback): Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin Integrated Power Devices and TCAD Simulation (Paperback)
Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin
R2,719 Discovery Miles 27 190 Ships in 10 - 15 working days

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

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