This book presents the fundamentals of novel gate dielectrics that
are being introduced into semiconductor manufacturing to ensure the
continuous scaling of CMOS devices. As this is a rapidly evolving
field of research we choose to focus on the materials that
determine the performance of device applications. Most of these
materials are transition metal oxides. Ironically, the d-orbitals
responsible for the high dielectric constant cause severe
integration difficulties, thus intrinsically limiting high-k
dielectrics. Though new in the electronics industry many of these
materials are well-known in the field of ceramics, and we describe
this unique connection. The complexity of the structure-property
relations in TM oxides requires the use of state-of-the-art
first-principles calculations. Several chapters give a detailed
description of the modern theory of polarization, and
heterojunction band discontinuity within the framework of the
density functional theory. Experimental methods include oxide melt
solution calorimetry and differential scanning calorimetry, Raman
scattering and other optical characterization techniques,
transmission electron microscopy, and X-ray photoelectron
spectroscopy.
Many of the problems encountered in the world of CMOS are also
relevant for other semiconductors such as GaAs. A comprehensive
review of recent developments in this field is thus also given. The
book will be of interest to those actively engaged in gate
dielectric research, and to graduate students in Materials Science,
Materials Physics, Materials Chemistry, and Electrical
Engineering.
General
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