During the last decade many new concepts have been proposed for
improving the performance of power MOSFETs. The results of this
research are dispersed in the technical literature among journal
articles and abstracts of conferences. Consequently, the
information is not readily available to researchers and practicing
engineers in the power device community. There is no cohesive
treatment of the ideas to provide an assessment of the relative
merits of the ideas. "Advanced Power MOSFET Concepts" provides an
in-depth treatment of the physics of operation of advanced power
MOSFETs. Analytical models for explaining the operation of all the
advanced power MOSFETs will be developed. The results of numerical
simulations will be provided to give additional insight into the
device physics and validate the analytical models. The results of
two-dimensional simulations will be provided to corroborate the
analytical models and give greater insight into the device
operation.
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