Wide Bandgap Semiconductor Power Devices: Materials, Physics,
Design and Applications provides readers with a single resource on
why these devices are superior to existing silicon devices. The
book lays the groundwork for an understanding of an array of
applications and anticipated benefits in energy savings. Authored
by the Founder of the Power Semiconductor Research Center at North
Carolina State University (and creator of the IGBT device), Dr. B.
Jayant Baliga is one of the highest regarded experts in the field.
He thus leads this team who comprehensively review the materials,
device physics, design considerations and relevant applications
discussed.
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