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Progress in SOI Structures and Devices Operating at Extreme Conditions (Paperback, Softcover reprint of the original 1st ed. 2002)
Loot Price: R5,563
Discovery Miles 55 630
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Progress in SOI Structures and Devices Operating at Extreme Conditions (Paperback, Softcover reprint of the original 1st ed. 2002)
Series: NATO Science Series II: Mathematics, Physics and Chemistry, 58
Expected to ship within 10 - 15 working days
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A review of the electrical properties, performance and physical
mechanisms of the main silicon-on-insulator (SOI) materials and
devices. Particular attention is paid to the reliability of SOI
structures operating in harsh conditions. The first part of the
book deals with material technology and describes the SIMOX and
ELTRAN technologies, the smart-cut technique, SiCOI structures and
MBE growth. The second part covers reliability of devices operating
under extreme conditions, with an examination of low and high
temperature operation of deep submicron MOSFETs and novel SOI
technologies and circuits, SOI in harsh environments and the
properties of the buried oxide. The third part deals with the
characterization of advanced SOI materials and devices, covering
laser-recrystallized SOI layers, ultrashort SOI MOSFETs and
nanostructures, gated diodes and SOI devices produced by a variety
of techniques. The last part reviews future prospects for SOI
structures, analyzing wafer bonding techniques, applications of
oxidized porous silicon, semi-insulating silicon materials,
self-organization of silicon dots and wires on SOI and some new
physical phenomena.
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