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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Handbook of Advanced Semiconductor Technology and Computer Systems (Paperback, Softcover reprint of the original 1st ed. 1988)
Loot Price: R3,068
Discovery Miles 30 680
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Handbook of Advanced Semiconductor Technology and Computer Systems (Paperback, Softcover reprint of the original 1st ed. 1988)
Series: Van Nostrand Reinhold Electrical/Computer Science and Engineering Series
Expected to ship within 10 - 15 working days
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Chapter I describes deposition as a basic microelectronics
technique. Plasma enhanced chemical vapor deposition (PECVD) is a
technique widely accepted in microelectronics for the deposition of
amorphous dielectric films such as silicon nitride and silicon
oxide. The main advantage of PECVD stems from the intro duction of
plasma energy to the CVD environment, which makes it possible to
promote chemical reactions at relatively low temperatures. A
natural extension of this is to use this plasma energy to lower the
temperature required to obtain a crystalline deposit. This chapter
discusses the PECVD technique and its ap plication to the
deposition of dielectric, semiconductor, and conductor films of
interest to microelectronics. Chapter 2 acquaints the reader with
the technology and capabilities of plasma processing. Batch etching
reactors and etching processes are approaching ma turity after more
than ten years of development. Requirements of anisotropic and
selective etching have been met using a variety of reactor
configurations and etching gases. The present emphasis is the
integration of plasma etching processes into the overall
fabrication sequence. Chapter 3 reviews recent advances in high
pressure oxidation technology and its applications to integrated
circuits. The high pressure oxidation system, oxi dation
mechanisms, oxidation-induced stacking faults, impurity
segregation, and oxide quality are described. Applications to
bipolar and MOS devices are also presented."
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