SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si
heterostructures application space. To date virtually every major
player in the communications electronics market either has SiGe up
and running in-house or is using someone else's SiGe fab as foundry
for their designers. Key to this success lies in successful
integration of the SiGe HBT and Si CMOS, with no loss of
performance from either device. Filled with contributions from
leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings
together a complete discussion of these topics into a single
resource.
Drawn from the comprehensive and well-reviewed "Silicon
Heterostructure Handbook," this volume examines the design,
fabrication, and application of silicon heterostructure
transistors. A novel aspect of this book the inclusion of numerous
snapshot views of the industrial state-of-the-art for SiGe HBT
BiCMOS technology. It has been carefully designed to provide a
useful basis of comparison for the current status and future course
of the global industry. In addition to the copious technical
material and the numerous references contained in each chapter, the
book includes easy-to-reference appendices on the properties of Si
and Ge, the generalized Moll-Ross relations, integral
charge-control relations, and sample SiGe HBT compact model
parameters.
General
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