Silicon Carbide 2008 - Materials, Processing and Devices: Volume 1069 (Hardcover)

Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

General

Imprint:	Materials Research Society
Country of origin:	United States
Series:	MRS Proceedings
Release date:	July 2008
First published:	July 2008
Editors:	Michael Dudley • C. Mark Johnson • Adrian R. Powell • Sei-Hyung Ryu
Dimensions:	228 x 152 x 20mm (L x W x T)
Format:	Hardcover - Cloth over boards
Pages:	283
ISBN-13:	978-1-60511-039-4
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
LSN:	1-60511-039-6
Barcode:	9781605110394

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