Silicon carbide (SiC) is a robust semiconductor material being
actively developed for high-power and high-temperature
applications, especially in the field of power electronics and
sensors for harsh environments. This book, the fifth in a
continuing series, focuses on SiC growth, defects, and devices. New
developments in the growth of bulk SiC single-crystal materials,
advances in the epitaxial growth of SiC, and progress in the
characterization of materials properties and defects in SiC are
featured. The volume also highlights the development of devices
manufactured on this wide-bandgap semiconductor including:
innovative device designs; characterization of device and materials
properties; and improvements in wide-bandgap processing technology.
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