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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering

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Modeling MOSFET Gain Compression And Quasi-Sat Behavior - High Voltage MOSFET Model For Lightly Doped Drains (Paperback) Loot Price: R241
Discovery Miles 2 410
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Modeling MOSFET Gain Compression And Quasi-Sat Behavior - High Voltage MOSFET Model For Lightly Doped Drains (Paperback): Mike...

Modeling MOSFET Gain Compression And Quasi-Sat Behavior - High Voltage MOSFET Model For Lightly Doped Drains (Paperback)

Mike Peralta

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Loot Price R241 Discovery Miles 2 410

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Expected to ship within 10 - 15 working days

General

Imprint: Createspace Independent Publishing Platform
Release date: September 2018
Authors: Mike Peralta
Dimensions: 229 x 152 x 1mm (L x W x T)
Format: Paperback - Trade
Pages: 24
ISBN-13: 978-1-72721-133-7
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General
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LSN: 1-72721-133-2
Barcode: 9781727211337

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