Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
|
Buy Now
Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip (Hardcover, 1st ed. 2018)
Loot Price: R3,217
Discovery Miles 32 170
|
|
Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip (Hardcover, 1st ed. 2018)
Expected to ship within 12 - 17 working days
|
This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM)
design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs
are specifically designed and optimized for a range of low-power
VLSI SoCs, ranging from ultra-low power to power-aware
high-performance applications. After a detailed review of prior-art
GC-eDRAMs, an analytical retention time distribution model is
introduced and validated by silicon measurements, which is key for
low-power GC-eDRAM design. The book then investigates supply
voltage scaling and near-threshold voltage (NTV) operation of a
conventional gain cell (GC), before presenting novel GC circuit and
assist techniques for NTV operation, including a 3-transistor full
transmission-gate write port, reverse body biasing (RBB), and a
replica technique for optimum refresh timing. Next, conventional GC
bitcells are evaluated under aggressive technology and voltage
scaling (down to the subthreshold domain), before novel bitcells
for aggressively scaled CMOS nodes and soft-error tolerance as
presented, including a 4-transistor GC with partial internal
feedback and a 4-transistor GC with built-in redundancy.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!
|
|
Email address subscribed successfully.
A activation email has been sent to you.
Please click the link in that email to activate your subscription.