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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Fundamentals of III-V Semiconductor MOSFETs (Paperback, 2010 ed.)
Loot Price: R4,398
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Fundamentals of III-V Semiconductor MOSFETs (Paperback, 2010 ed.)
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Fundamentals of III-V Semiconductor MOSFETs presents the
fundamentals and current status of research of compound
semiconductor metal-oxide-semiconductor field-effect transistors
(MOSFETs) that are envisioned as a future replacement of silicon in
digital circuits. The material covered begins with a review of
specific properties of III-V semiconductors and available
technologies making them attractive to MOSFET technology, such as
band-engineered heterostructures, effect of strain, nanoscale
control during epitaxial growth. Due to the lack of
thermodynamically stable native oxides on III-V's (such as SiO2 on
Si), high-k oxides are the natural choice of dielectrics for III-V
MOSFETs. The key challenge of the III-V MOSFET technology is a
high-quality, thermodynamically stable gate dielectric that
passivates the interface states, similar to SiO2 on Si. Several
chapters give a detailed description of materials science and
electronic behavior of various dielectrics and related interfaces,
as well as physics of fabricated devices and MOSFET fabrication
technologies. Topics also include recent progress and understanding
of various materials systems; specific issues for electrical
measurement of gate stacks and FETs with low and wide bandgap
channels and high interface trap density; possible paths of
integration of different semiconductor materials on Si platform.
General
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