Ionizing Radiation Effects in MOS Devices and Circ Circuits (Hardcover, Annotated Ed)

This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.

General

Imprint:	John Wiley & Sons
Country of origin:	United States
Release date:	June 1989
First published:	1989
Authors:	T. P. Ma
Dimensions:	239 x 166 x 38mm (L x W x T)
Format:	Hardcover
Pages:	608
Edition:	Annotated Ed
ISBN-13:	978-0-471-84893-6
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Promotions
LSN:	0-471-84893-X
Barcode:	9780471848936

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