The completely revised and updated edition --with essential information on improved treatments
Earlier editions of this text have established it as an excellent primer for radiotherapy of head and neck cancers. Now this new volume brings this material fully up to date with recent developments concerning treatment techniques, use of modalities, and the management of early and advanced tumors. With fresh data published here for the first time, this superb resource has been extensively reworked to include:
* A broad range of strategies for managing carcinomas of the oral cavity, horopharynx, hypopharynx, larynx, nasopharynx, paranasal sinuses, nasal cavity, salivary glands, and eye.
* Greatly expanded material on applied anatomy, treatment methods, and technical pointers.
* Detailed site-specific treatment coverage--pathology, staging, selection of modalities, radiation techniques, current treatment data, and more.
* An in-depth case study analysis, comparing conventional radiation therapy to altered fractionation radiation therapy.
* A separate chapter on dental care before, during, and after radiation therapy.
* New illustrations throughout, plus over 100 photographs
This text provides invaluable guidance on the management of head and neck neoplasms to radiation oncologists, head and neck surgeons, oral surgeons, medical oncologists, medical students, and residents.

The term "dislocation" is used in several different senses in the literature of mechanics. In the elassic work of VOLTERRA, WEINGARTEN, and SOMIGLIANA, it refers to particular solutions of the equations of linear elasticity, in which a con tinuous field of strain does not correspond, globally, to a continuous field of dis placement. The configuration of the body so obtained, even when that body is free of all load, is subject to interior stress that does not vanish, and in general no deformation of the body as a wh oIe can bring it into a stress-free configuration. Nevertheless, if any sufficiently sm all part of the body is considered by itself, a configuration for it in which the stress is everywhere zero may be found at once. In this work constitutiL"e assumptions provide the basic data. These consist in prescribed stress-free configurations for each material point and in prescribed elastic moduli governing the response to deformation from the stress-free configuration at each material point. Everything follows from these data, ineluding the dislocations present, if any. In particular, the common boundary-value problems of linear elasticity may be set and solved for the dislocated body."

Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

In the first edition of this book I tried to survey in brief compass the main ideas, methods, and discoveries of rational thermodynamics as it then stood, only five years after Messrs. COLEMAN & NOLL, while in Baltimore, had written the fundamental memoir that provided for the new science the one root theretofore wanting. A survey in the same style today would require an almost wholly new book, three or four times as long. As it was in 1968, again in 1983 a consecutive treatise restricted to the foundations would be premature, for at this moment they are under earnest discussion, probing analysis, and powerful attack by several students and from several directions. Because, although in the first edition I expressed some opinions I no longer hold and made some statements I should now recast or even re tract, it seems even yet to offer a simple introduction to some aspects of the field that remain current, I have chosen to reprint it unaltered except for emendation of slips and bettering of the English here and there."