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Discusses latest updates in the field of ultra-low power
semiconductor transistors. Provides both experimental and
analytical solutions for TFETs and NCFETs. Presents the synthesis
and fabrication of FinFETs. Gives out details of 2D Materials and
2D transistors. Explores the application of FETs for biosensing in
healthcare field.
This book focusses on III-V high electron mobility transistors
(HEMTs) including basic physics, material used, fabrications
details, modeling, simulation, and other important aspects. It
initiates by describing principle of operation, material systems
and material technologies followed by description of the structure,
I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN
HEMTs. The book also provides information about source/drain
engineering, gate engineering and channel engineering techniques
used to improve the DC-RF and breakdown performance of HEMTs.
Finally, the book also highlights the importance of metal oxide
semiconductor high electron mobility transistors (MOS-HEMT). Key
Features Combines III-As/P/N HEMTs with reliability and current
status in single volume Includes AC/DC modelling and
(sub)millimeter wave devices with reliability analysis Covers all
theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN
transistors Presents DC, RF and breakdown characteristics of HEMTs
on various material systems using graphs and plots
This book focusses on III-V high electron mobility transistors
(HEMTs) including basic physics, material used, fabrications
details, modeling, simulation, and other important aspects. It
initiates by describing principle of operation, material systems
and material technologies followed by description of the structure,
I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN
HEMTs. The book also provides information about source/drain
engineering, gate engineering and channel engineering techniques
used to improve the DC-RF and breakdown performance of HEMTs.
Finally, the book also highlights the importance of metal oxide
semiconductor high electron mobility transistors (MOS-HEMT). Key
Features Combines III-As/P/N HEMTs with reliability and current
status in single volume Includes AC/DC modelling and
(sub)millimeter wave devices with reliability analysis Covers all
theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN
transistors Presents DC, RF and breakdown characteristics of HEMTs
on various material systems using graphs and plots
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