Handbook for III-V High Electron Mobility Transistor Technologies (Paperback)

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

General

Imprint:	Crc Press
Country of origin:	United Kingdom
Release date:	December 2020
First published:	2019
Editors:	D. Nirmal • J. Ajayan
Dimensions:	254 x 178mm (L x W)
Format:	Paperback
Pages:	444
ISBN-13:	978-0-367-72924-0
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
LSN:	0-367-72924-5
Barcode:	9780367729240

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