There is a growing understanding that the progress of the conventional silicon technology will reach its physical, engineering and economic limits in near future. This fact, however, does not mean that progress in computing will slow down. What will take us beyond the silicon era are new nano-technologies that are being pursued in university and corporate laboratories around the world. In particular, molecular switching devices and systems that will self-assemble through molecular recognition are being designed and studied. Many labora tories are now testing new types of these and other reversible switches, as well as fabricating nanowires needed to connect circuit elements together. But there are still significant opportunities and demand for invention and discovery be fore nanoelectronics will become a reality. The actual mechanisms of transport through molecular quantum dots and nanowires are of the highest current ex perimental and theoretical interest. In particular, there is growing evidence that both electron-vibron interactions and electron-electron correlations are impor tant. Further progress requires worldwide efforts of trans-disciplinary teams of physicists, quantum chemists, material and computer scientists, and engineers."

The characteristics of electrical contacts have long attracted the attention of researchers since these contacts are used in every electrical and electronic device. Earlier studies generally considered electrical contacts of large dimensions, having regions of current concentration with diameters substantially larger than the characteristic dimensions of the material: the interatomic distance, the mean free path for electrons, the coherence length in the superconducting state, etc. [110]. The development of microelectronics presented to scientists and engineers the task of studying the characteristics of electrical contacts with ultra-small dimensions. Characteristics of point contacts such as mechanical stability under continuous current loads, the magnitudes of electrical fluctuations, inherent sensitivity in radio devices and nonlinear characteristics in connection with electromagnetic radiation can not be understood and altered in the required way without knowledge of the physical processes occurring in contacts. Until recently it was thought that the electrical conductivity of contacts with direct conductance (without tunneling or semiconducting barriers) obeyed Ohm's law. Nonlinearities of the current-voltage characteristics were explained by joule heating of the metal in the region of the contact. However, studies of the current-voltage characteristics of metallic point contacts at low (liquid helium) temperatures [142] showed that heating effects were negligible in many cases and the nonlinear characteristics under these conditions were observed to take the form of the energy dependent probability of inelastic electron scattering, induced by various mechanisms.

The characteristics of electrical contacts have long attracted the attention of researchers since these contacts are used in every electrical and electronic device. Earlier studies generally considered electrical contacts of large dimensions, having regions of current concentration with diameters substantially larger than the characteristic dimensions of the material: the interatomic distance, the mean free path for electrons, the coherence length in the superconducting state, etc. [110]. The development of microelectronics presented to scientists and engineers the task of studying the characteristics of electrical contacts with ultra-small dimensions. Characteristics of point contacts such as mechanical stability under continuous current loads, the magnitudes of electrical fluctuations, inherent sensitivity in radio devices and nonlinear characteristics in connection with electromagnetic radiation can not be understood and altered in the required way without knowledge of the physical processes occurring in contacts. Until recently it was thought that the electrical conductivity of contacts with direct conductance (without tunneling or semiconducting barriers) obeyed Ohm's law. Nonlinearities of the current-voltage characteristics were explained by joule heating of the metal in the region of the contact. However, studies of the current-voltage characteristics of metallic point contacts at low (liquid helium) temperatures [142] showed that heating effects were negligible in many cases and the nonlinear characteristics under these conditions were observed to take the form of the energy dependent probability of inelastic electron scattering, induced by various mechanisms.

There is a growing understanding that the progress of the conventional silicon technology will reach its physical, engineering and economic limits in near future. This fact, however, does not mean that progress in computing will slow down. What will take us beyond the silicon era are new nano-technologies that are being pursued in university and corporate laboratories around the world. In particular, molecular switching devices and systems that will self-assemble through molecular recognition are being designed and studied. Many labora tories are now testing new types of these and other reversible switches, as well as fabricating nanowires needed to connect circuit elements together. But there are still significant opportunities and demand for invention and discovery be fore nanoelectronics will become a reality. The actual mechanisms of transport through molecular quantum dots and nanowires are of the highest current ex perimental and theoretical interest. In particular, there is growing evidence that both electron-vibron interactions and electron-electron correlations are impor tant. Further progress requires worldwide efforts of trans-disciplinary teams of physicists, quantum chemists, material and computer scientists, and engineers."