This book covers a comprehensive range of topics on the physical mechanisms of LEDs (Light Emitting Diodes), scattering effects, challenges in fabrication and efficient enhancement techniques in organic and inorganic LEDs. It deals with various reliability issues in organic/inorganic LEDs like trapping and scattering effects, packaging failures, efficiency droops, irradiation effects, thermal degradation mechanisms etc. Features: Provides insights into the improvement of performance and reliability of LEDs Highlights the optical power improvement mechanisms in LEDs Covers the challenges in fabrication and packaging of LEDs Discusses pertinent failures and degradation mechanisms Includes droop minimization techniques This book is aimed at researchers and graduate students in LEDs, illumination engineering, optoelectronics, and polymer/organic materials.

Discusses latest updates in the field of ultra-low power semiconductor transistors. Provides both experimental and analytical solutions for TFETs and NCFETs. Presents the synthesis and fabrication of FinFETs. Gives out details of 2D Materials and 2D transistors. Explores the application of FETs for biosensing in healthcare field.

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

This book serves as a quick guide on the latest material systems including their synthesis, fabrication and characterization techniques. It discusses recent developments in different material systems and discusses their novel applications in various branches of science and engineering. The book briefs latest computational tools and techniques that are used to discover new material systems. The book also briefs applications of new emerging materials in various fields including, healthcare, sensors, opto-electronics, high power devices and nano-electronics. This book helps to create a synergy between computational and experimental research methods to better understand a particular material system.

This book serves as a quick guide on the latest material systems including their synthesis, fabrication and characterization techniques. It discusses recent developments in different material systems and discusses their novel applications in various branches of science and engineering. The book briefs latest computational tools and techniques that are used to discover new material systems. The book also briefs applications of new emerging materials in various fields including, healthcare, sensors, opto-electronics, high power devices and nano-electronics. This book helps to create a synergy between computational and experimental research methods to better understand a particular material system.

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots