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This book provides a guide to Static Random Access Memory (SRAM)
bitcell design and analysis to meet the nano-regime challenges for
CMOS devices and emerging devices, such as Tunnel FETs. Since
process variability is an ongoing challenge in large memory arrays,
this book highlights the most popular SRAM bitcell topologies
(benchmark circuits) that mitigate variability, along with
exhaustive analysis. Experimental simulation setups are also
included, which cover nano-regime challenges such as process
variation, leakage and NBTI for SRAM design and analysis. Emphasis
is placed throughout the book on the various trade-offs for
achieving a best SRAM bitcell design.Provides a complete and
concise introduction to SRAM bitcell design and analysis; Offers
techniques to face nano-regime challenges such as process
variation, leakage and NBTI for SRAM design and analysis;Includes
simulation set-ups for extracting different design metrics for CMOS
technology and emerging devices;Emphasizes different trade-offs for
achieving the best possible SRAM bitcell design.
This book provides a guide to Static Random Access Memory (SRAM)
bitcell design and analysis to meet the nano-regime challenges for
CMOS devices and emerging devices, such as Tunnel FETs. Since
process variability is an ongoing challenge in large memory arrays,
this book highlights the most popular SRAM bitcell topologies
(benchmark circuits) that mitigate variability, along with
exhaustive analysis. Experimental simulation setups are also
included, which cover nano-regime challenges such as process
variation, leakage and NBTI for SRAM design and analysis. Emphasis
is placed throughout the book on the various trade-offs for
achieving a best SRAM bitcell design. Provides a complete and
concise introduction to SRAM bitcell design and analysis; Offers
techniques to face nano-regime challenges such as process
variation, leakage and NBTI for SRAM design and analysis; Includes
simulation set-ups for extracting different design metrics for CMOS
technology and emerging devices; Emphasizes different trade-offs
for achieving the best possible SRAM bitcell design.
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