The Korean American community is one of the major Asian ethnic subgroups in the United States. Though considered among one of the model minority groups, excelling academically and professionally, members in this community are plagued by unaddressed mental health obstacles. In Understanding Korean Americans' Mental Health: A Guide to Culturally Competent Practices, Program Developments, and Policies, the editors, Anderson Sungmin Yoon, Sung Seek Moon, and Haein Son, examine a variety of mental health issues in the Korean American community, including depression, suicide, substance abuse, and trauma, and convincingly connect these challenges to cultural stigma and racial prejudice. The editors argue that this population and its mental health needs are neglected by current approaches in mainstream mental health services. Alarmingly, the very cultural values that help make up the Korean American community are contributing to its members' reluctance to seek care, counting both familial and communal shame among the most pressing culprits. This book supports these claims with statistical realities and seeks to gather the relatively scarce research that does exist on this topic to underscore the heightened prevalence of mental health issues among Korean Americans, and the contributors make recommendations for more culturally competent practices, program developments, and policies.

At nearly 1.9 million, the Korean American community is one of the major Asian ethnic subgroups in the United States. Though considered among one of the model minority groups, excelling academically and professionally, members in this community are plagued by unaddressed mental health obstacles. In Understanding Korean Americans' Mental Health: A Guide to Culturally Competent Practices, Program Developments, and Policies, the editors, Anderson Sungmin Yoon, Sung Seek Moon, and Haein Son, examine a variety of mental health issues in the Korean American community, including depression, anxiety, suicide, substance abuse, and trauma, and convincingly connect these challenges to cultural stigma and racial prejudice. The editors argue that this population and its mental health needs are, to varying degrees, neglected by current approaches in mainstream mental health services. Alarmingly, the very cultural values and attitudes that help make up the Korean American community are contributing to its members' reluctance to seek care, counting both familial and communal shame among the most pressing culprits. This book supports these claims with statistical realities and seeks to gather the relatively scarce research that does exist on this topic to underscore the heightened prevalence of mental health issues and related symptoms among Korean Americans, and the contributors make recommendations for more culturally competent practices, program developments, and policies.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.