Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.

Revolution threatens to break out on the planet Bolshevik. Once touted as humanity's workers paradise,this world is overwhelmed with roving vigilantes, ambitious politicians, and renegade military officers. Seeking an answer to the problem, the government hires Outbound Ventures, Inc. Captain Michel Luthien, CO of the SS Obsidian, leads a mixed crew comprised of exiles, naval officers, private investigators, aliens, bounty hunters and former terrorists. Hired to diffuse the situation, they launch an investigation into the matter. The problem is that these so-called saviors may end up joining the revolution. Written as a homage to pulp fiction stories of yesteryear, Outbound Ventures: Revolution captures the spirit of the Golden Age of Science Fiction Adventure stories.

The emergence of GaN-based devices promises a revolution in areas requiring high performance electronics, such as high speed earth and space-based communication systems, advanced radar, integrated sensors, high temperature electronics, and utility power switching. The properties of this system make it ideally suited for operation at elevated temperatures and at voltage and current levels well beyond that accessible by Si. Recent improvements in material quality and device performance are rapidly opening the door to commercialization, and III-N technologies are demonstrating exciting developments of late. Though devices are entering commercialization, there are still considerable unknowns, particularly in the reliability field. Recent advances at the University of Florida will be detailed in this work.