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Nano-CMOS Gate Dielectric Engineering (Hardcover)
Loot Price: R3,187
Discovery Miles 31 870
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Nano-CMOS Gate Dielectric Engineering (Hardcover)
Expected to ship within 12 - 17 working days
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According to Moore's Law, not only does the number of transistors
in an integrated circuit double every two years, but transistor
size also decreases at a predictable rate. At the rate we are
going, the downsizing of CMOS transistors will reach the
deca-nanometer scale by 2020. Accordingly, the gate dielectric
thickness will be shrunk to less than half-nanometer oxide
equivalent thickness (EOT) to maintain proper operation of the
transistors, leaving high-k materials as the only viable solution
for such small-scale EOT. This comprehensive, up-to-date text
covering the physics, materials, devices, and fabrication processes
for high-k gate dielectric materials, Nano-CMOS Gate Dielectric
Engineering systematically describes how the fundamental electronic
structures and other material properties of the transition metals
and rare earth metals affect the electrical properties of the
dielectric films, the dielectric/silicon and the dielectric/metal
gate interfaces, and the resulting device properties. Specific
topics include the problems and solutions encountered with high-k
material thermal stability, defect density, and poor initial
interface with silicon substrate. The text also addresses the
essence of thin film deposition, etching, and process integration
of high-k materials in an actual CMOS process. Fascinating in both
content and approach, Nano-CMOS Gate Dielectric Engineering
explains all of the necessary physics in a highly readable manner
and supplements this with numerous intuitive illustrations and
tables. Covering almost every aspect of high-k gate dielectric
engineering for nano-CMOS technology, this is a perfect reference
book for graduate students needing a better understanding of
developing technology as well as researchers and engineers needing
to get ahead in microelectronic engineering and materials science.
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