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Ferroelectric Random Access Memories - Fundamentals and Applications (Hardcover, 2004 ed.) Loot Price: R8,457
Discovery Miles 84 570
Ferroelectric Random Access Memories - Fundamentals and Applications (Hardcover, 2004 ed.): Hiroshi Ishiwara, Masanori Okuyama,...

Ferroelectric Random Access Memories - Fundamentals and Applications (Hardcover, 2004 ed.)

Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto

Series: Topics in Applied Physics, 93

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Loot Price R8,457 Discovery Miles 84 570 | Repayment Terms: R793 pm x 12*

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In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

General

Imprint: Springer-Verlag
Country of origin: Germany
Series: Topics in Applied Physics, 93
Release date: April 2004
First published: 2004
Editors: Hiroshi Ishiwara • Masanori Okuyama • Yoshihiro Arimoto
Dimensions: 235 x 155 x 19mm (L x W x T)
Format: Hardcover
Pages: 291
Edition: 2004 ed.
ISBN-13: 978-3-540-40718-8
Categories: Books > Computing & IT > Computer hardware & operating systems > Storage media & peripherals
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
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LSN: 3-540-40718-9
Barcode: 9783540407188

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