SiGe HBTs are the most mature of the Si heterostructure devices and
not surprisingly the most completely researched and discussed in
the technical literature. However, new effects and nuances of
device operation are uncovered year-after-year as transistor
scaling advances and application targets march steadily upward in
frequency and sophistication. Providing a comprehensive treatment
of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly
diverse set of topics, ranging from basic transistor physics to
noise, radiation effects, reliability, and TCAD simulation.
Drawn from the comprehensive and well-reviewed "Silicon
Heterostructure Handbook," this text explores SiGe heterojunction
bipolar transistors (HBTs), heterostructure FETs, various other
heterostructure devices, as well as optoelectronic components. The
book provides an overview, characteristics, and derivative
applications for each device covered. It discusses device physics,
broadband noise, performance limits, reliability, engineered
substrates, and self-assembling nanostructures. Coverage of
optoelectronic devices includes Si/SiGe LEDs, near-infrared
detectors, photonic transistors for integrated optoelectronics, and
quantum cascade emitters. In addition to this substantial
collection of material, the book concludes with a look at the
ultimate limits of SiGe HBTs scaling. It contains easy-to-reference
appendices on topics including the properties of silicon and
germanium, the generalized Moll-Ross relations, and the integral
charge-control model, and sample SiGe HBT compact model
parameters.
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