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Books > Professional & Technical > Energy technology & engineering > Electrical engineering
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Influence of Temperature on Microelectronics and System Reliability - A Physics of Failure Approach (Paperback)
Loot Price: R1,285
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Influence of Temperature on Microelectronics and System Reliability - A Physics of Failure Approach (Paperback)
Expected to ship within 12 - 17 working days
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This book raises the level of understanding of thermal design
criteria. It provides the design team with sufficient knowledge to
help them evaluate device architecture trade-offs and the effects
of operating temperatures. The author provides readers a sound
scientific basis for system operation at realistic steady state
temperatures without reliability penalties. Higher temperature
performance than is commonly recommended is shown to be cost
effective in production for life cycle costs. The microelectronic
package considered in the book is assumed to consist of a
semiconductor device with first-level interconnects that may be
wirebonds, flip-chip, or tape automated bonds; die attach;
substrate; substrate attach; case; lid; lid seal; and lead seal.
The temperature effects on electrical parameters of both bipolar
and MOSFET devices are discussed, and models quantifying the
temperature effects on package elements are identified.
Temperature-related models have been used to derive derating
criteria for determining the maximum and minimum allowable
temperature stresses for a given microelectronic package
architecture. The first chapter outlines problems with some of the
current modeling strategies. The next two chapters present
microelectronic device failure mechanisms in terms of their
dependence on steady state temperature, temperature cycle,
temperature gradient, and rate of change of temperature at the chip
and package level. Physics-of-failure based models used to
characterize these failure mechanisms are identified and the
variabilities in temperature dependence of each of the failure
mechanisms are characterized. Chapters 4 and 5 describe the effects
of temperature on the performance characteristics of MOS and
bipolar devices. Chapter 6 discusses using high-temperature stress
screens, including burn-in, for high-reliability applications. The
burn-in conditions used by some manufacturers are examined and a
physics-of-failure approach is described. The
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