3D Integration of Resistive Switching Memory (Hardcover)

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

General

Imprint:	Taylor & Francis
Country of origin:	United Kingdom
Series:	Frontiers in Semiconductor Technology
Release date:	April 2023
First published:	2023
Editors:	Qing Luo
Dimensions:	216 x 138mm (L x W)
Format:	Hardcover
Pages:	98
ISBN-13:	978-1-03-248943-8
Categories:	Books > Professional & Technical > Environmental engineering & technology > General Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General
LSN:	1-03-248943-X
Barcode:	9781032489438

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