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Transistor Scaling: Volume 913 - Methods, Materials and Modeling (Hardcover, illustrated edition)
Loot Price: R982
Discovery Miles 9 820
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Transistor Scaling: Volume 913 - Methods, Materials and Modeling (Hardcover, illustrated edition)
Series: MRS Proceedings
Expected to ship within 12 - 17 working days
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For the past four decades, geometric scaling of silicon CMOS
transistors has enabled not only an exponential increase in circuit
integration density -Moore's Law - but also a corresponding
enhancement in the transistor performance. Simple MOSFET geometric
scaling has driven the industry to date. However, as the transistor
gate lengths drop below 35nm and the gate oxide thickness is
reduced to 1nm, physical limitations such as off-state leakage
current and power density make geometric scaling an increasingly
challenging task. In order to continue CMOS device scaling,
innovations in device structures and materials are required and the
industry needs a new scaling vector. Starting at the 90 and 65nm
technology generation, strained silicon has emerged as one such
innovation. Other device structures such as multigate FETs may be
introduced to meet the scaling challenge. This book shares results
and physical models related to MOSFETs and to discuss innovative
approaches necessary to continue the transistor scaling. Expanded
versions of presentations in the areas of technology development
are featured
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