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Nanoscaled Semiconductor-on-Insulator Structures and Devices (Hardcover, 2nd ed.): S. Hall, A.N. Nazarov, V.S. Lysenko Nanoscaled Semiconductor-on-Insulator Structures and Devices (Hardcover, 2nd ed.)
S. Hall, A.N. Nazarov, V.S. Lysenko
R5,647 Discovery Miles 56 470 Ships in 10 - 15 working days

The fascinating pages of this book detail many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures.Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology.One of the key issues concerns mobility degradation in SOI films less than about 5nm.The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node.A further key issue and potential show stopper' for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects.

Nanoscaled Semiconductor-on-Insulator Structures and Devices (Paperback, 2007 ed.): S. Hall, A.N. Nazarov, V.S. Lysenko Nanoscaled Semiconductor-on-Insulator Structures and Devices (Paperback, 2007 ed.)
S. Hall, A.N. Nazarov, V.S. Lysenko
R5,572 Discovery Miles 55 720 Ships in 10 - 15 working days

The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential show stopper for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

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