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Nanoscaled Semiconductor-on-Insulator Structures and Devices (Hardcover, 2nd ed.) Loot Price: R5,647
Discovery Miles 56 470
Repayment Terms: R529 pm x 12*
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Nanoscaled Semiconductor-on-Insulator Structures and Devices (Hardcover, 2nd ed.): S. Hall, A.N. Nazarov, V.S. Lysenko

Nanoscaled Semiconductor-on-Insulator Structures and Devices (Hardcover, 2nd ed.)

S. Hall, A.N. Nazarov, V.S. Lysenko

Series: NATO Science for Peace and Security Series B: Physics and Biophysics

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Loot Price R5,647 Discovery Miles 56 470 | Repayment Terms: R529 pm x 12*

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The fascinating pages of this book detail many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures.Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology.One of the key issues concerns mobility degradation in SOI films less than about 5nm.The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node.A further key issue and potential show stopper' for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects.

General

Imprint: Springer-Verlag New York
Country of origin: United States
Series: NATO Science for Peace and Security Series B: Physics and Biophysics
Release date: July 2007
First published: 2007
Editors: S. Hall • A.N. Nazarov • V.S. Lysenko
Dimensions: 235 x 155 x 22mm (L x W x T)
Format: Hardcover
Pages: 369
Edition: 2nd ed.
ISBN-13: 978-1-4020-6378-7
Categories: Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Applied optics > General
LSN: 1-4020-6378-4
Barcode: 9781402063787

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