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Recent advances in semiconductor technology offer vertical
interconnect access (via) that extend through silicon, popularly
known as through silicon via (TSV). This book provides a
comprehensive review of the theory behind TSVs while covering most
recent advancements in materials, models and designs. Furthermore,
depending on the geometry and physical configurations, different
electrical equivalent models for Cu, carbon nanotube (CNT) and
graphene nanoribbon (GNR) based TSVs are presented. Based on the
electrical equivalent models the performance comparison among the
Cu, CNT and GNR based TSVs are also discussed.
Recent advances in semiconductor technology offer vertical
interconnect access (via) that extend through silicon, popularly
known as through silicon via (TSV). This book provides a
comprehensive review of the theory behind TSVs while covering most
recent advancements in materials, models and designs. Furthermore,
depending on the geometry and physical configurations, different
electrical equivalent models for Cu, carbon nanotube (CNT) and
graphene nanoribbon (GNR) based TSVs are presented. Based on the
electrical equivalent models the performance comparison among the
Cu, CNT and GNR based TSVs are also discussed.
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