MR is a powerful modality. At its most advanced, it can be used not just to image anatomy and pathology, but to investigate organ function, to probe in vivo chemistry, and even to visualise the brain thinking. However, clinicians, technologists and scientists struggle with the study of the subject. The result is sometimes an obscurity of understanding, or a dilution of scientific truth, resulting in misconceptions. This is why MRI from Picture to Proton has achieved its reputation for practical clarity. MR is introduced as a tool, with coverage starting from the images, equipment and scanning protocols and traced back towards the underlying physics theory. With new content on quantitative MRI, MR safety, multi-band excitation, Dixon imaging, MR elastography and advanced pulse sequences, and with additional supportive materials available on the book's website, this new edition is completely revised and updated to reflect the best use of modern MR technology.

This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time and implantation dose. Highly conductive alloys are critical to the fabrication of devices operative in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The AlxGa1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at room temperature with silicon ions at energies of 200 keV with doses of 1x1014, 5x1014, and 1x1015 cm-2 and annealed from 1100 to 1350-C for 20 to 40 minutes in flowing nitrogen.