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Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction (Paperback) Loot Price: R1,462
Discovery Miles 14 620
Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction (Paperback):...

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction (Paperback)

Elizabeth A. Moore

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Loot Price R1,462 Discovery Miles 14 620 | Repayment Terms: R137 pm x 12*

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This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time and implantation dose. Highly conductive alloys are critical to the fabrication of devices operative in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The AlxGa1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at room temperature with silicon ions at energies of 200 keV with doses of 1x1014, 5x1014, and 1x1015 cm-2 and annealed from 1100 to 1350-C for 20 to 40 minutes in flowing nitrogen.

General

Imprint: Biblioscholar
Country of origin: United States
Release date: October 2012
First published: October 2012
Authors: Elizabeth A. Moore
Dimensions: 246 x 189 x 17mm (L x W x T)
Format: Paperback - Trade
Pages: 314
ISBN-13: 978-1-249-91843-1
Categories: Books > Social sciences > Education > General
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LSN: 1-249-91843-X
Barcode: 9781249918431

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