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Ion implantation offers one of the best examples of a topic that
starting from the basic research level has reached the high
technology level within the framework of microelectronics. As the
major or the unique procedure to selectively dope semiconductor
materials for device fabrication, ion implantation takes advantage
of the tremendous development of microelectronics and it evolves in
a multidisciplinary frame. Physicists, chemists, materials sci
entists, processing, device production, device design and ion beam
engineers are all involved in this subject. The present monography
deals with several aspects of ion implantation. The first chapter
covers basic information on the physics of devices together with a
brief description of the main trends in the field. The second
chapter is devoted to ion im planters, including also high energy
apparatus and a description of wafer charging and contaminants.
Yield is a quite relevant is sue in the industrial surrounding and
must be also discussed in the academic ambient. The slowing down of
ions is treated in the third chapter both analytically and by
numerical simulation meth ods. Channeling implants are described in
some details in view of their relevance at the zero degree implants
and of the available industrial parallel beam systems. Damage and
its annealing are the key processes in ion implantation. Chapter
four and five are dedicated to this extremely important subject."
Semiconductors lie at the heart of some of the most important
industries and technologies of the twentieth century. The
complexity of silicon integrated circuits is increasing
considerably because of the continuous dimensional shrinkage to
improve efficiency and functionality. This evolution in design
rules poses real challenges for the materials scientists and
processing engineers. Materials, defects and processing now have to
be understood in their totality. World experts discuss, in this
volume, the crucial issues facing lithography, ion implication and
plasma processing, metallization and insulating layer quality, and
crystal growth. Particular emphasis is placed upon silicon, but
compound semiconductors and photonic materials are also
highlighted. The fundamental concepts of phase stability,
interfaces and defects play a key role in understanding these
crucial issues. These concepts are reviewed in a crucial fashion.
Ion implantation offers one of the best examples of a topic that
starting from the basic research level has reached the high
technology level within the framework of microelectronics. As the
major or the unique procedure to selectively dope semiconductor
materials for device fabrication, ion implantation takes advantage
of the tremendous development of microelectronics and it evolves in
a multidisciplinary frame. Physicists, chemists, materials sci
entists, processing, device production, device design and ion beam
engineers are all involved in this subject. The present monography
deals with several aspects of ion implantation. The first chapter
covers basic information on the physics of devices together with a
brief description of the main trends in the field. The second
chapter is devoted to ion im planters, including also high energy
apparatus and a description of wafer charging and contaminants.
Yield is a quite relevant is sue in the industrial surrounding and
must be also discussed in the academic ambient. The slowing down of
ions is treated in the third chapter both analytically and by
numerical simulation meth ods. Channeling implants are described in
some details in view of their relevance at the zero degree implants
and of the available industrial parallel beam systems. Damage and
its annealing are the key processes in ion implantation. Chapter
four and five are dedicated to this extremely important subject.
Semiconductors lie at the heart of some of the most important
industries and technologies of the twentieth century. The
complexity of silicon integrated circuits is increasing
considerably because of the continuous dimensional shrinkage to
improve efficiency and functionality. This evolution in design
rules poses real challenges for the materials scientists and
processing engineers. Materials, defects and processing now have to
be understood in their totality. World experts discuss, in this
volume, the crucial issues facing lithography, ion implication and
plasma processing, metallization and insulating layer quality, and
crystal growth. Particular emphasis is placed upon silicon, but
compound semiconductors and photonic materials are also
highlighted. The fundamental concepts of phase stability,
interfaces and defects play a key role in understanding these
crucial issues. These concepts are reviewed in a crucial fashion.
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